Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature
نویسندگان
چکیده
منابع مشابه
Excimer Laser-Induced Ti Silicidation to Eliminate the Fine-Line Effect for Integrated Circuit Device Fabrication
In this paper laser thermal processing ~LTP! is applied to induce the Ti silicide formation in replacement of rapid thermal annealing ~RTA! in narrow lines. Results show that the C40 TiSi2 is synthesized after LTP in both large and small features. With this interfacial C40 TiSi2 , the C54 TiSi2-phase formation temperature can be lowered by 100°C during subsequent annealing. The C40-C54-phase tr...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/5.0016091